the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. 2002 bicmos integrated circuit pc2807h,2807ha preamplifier for infrared remote controller data s heet document no. s16455ej1v0ds00 (1st edition) date published october 2002 ns cp (k) printed in japan description the pc2807h and 2807ha are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. these preamplifiers can be directly connected to a pin photodiode, and integrate a high- gain first stage amplifier, limiter, bandpass filter, detector circuit, and waveform-shaping circuit on a single chip. features ? only pin photodiode required as an external component. ? following carrier frequencies (f o ) selectable (six types): pc2807h : f o = 32.7, 36.0, 36.7, 37.9, 56.7 khz pc2807ha : f o = 40.0 khz ? fixed trap frequency f t = 54 khz (when carrier frequency is 56.7 khz, trap frequency is 76 khz) ? active-low output ? high-speed rise and fall time of output pulse (less than 2 s) ? supplied in form of wafer application ? receiver module of infrared remote controller ordering information part number condition in shipment pc2807hw wafer pc2807haw wafer contact an nec sales representative in advance since a memorandum on product quality need to be prepared for shipment in the form of wafer.
data sheet s16455ej1v0ds 2 pc2807h, 2807ha block diagram 6 13 12 11 10 trap skip first-stage amplifier 4 waveform-shaping circuit 2 limiter amplifier trimming circuit 1 f o setting 8 7 3 gnd1 gnd2 pad6 pad3 pad4 pad5 9 5 out s3 s2 pad1 in s1 trap bpf v cc detector 22 k ? i/v ablc carrier elimination
data sheet s16455ej1v0ds 3 pc2807h, 2807ha pad function symbol pad no. function v cc 6 power pad. apply a voltage of 5 v 10%. connect an external smoothing filter if noise on power line is high. gnd1 7 gnd pad (for output transistor) gnd2 8 gnd pad (for circuits excluding output transistor) in 9 input pad. internal impedance is 190 k ? typ. pin photodiode can be directly connected. out 5 output pad. open-collector output with pull-up resistor (22 k ? typ.) to connect pull-up resistor, use resistor of 10 k ? or higher. s1 1 bpf center frequency setting pads. s2 2 connect pad corresponding to carrier frequency to be used to gnd note . s3 4 pad1 3 bpf output pad. parameters such as voltage gain and bpf bandwidth can be tested. do not connect this pad to anything on final assembly. pad3 10 test and trimming pads. do not connect these pads to anything. pad4 11 pad5 12 pad6 13 note connect each of bpf center frequency setting pads as follows depending on the carrier frequency. ? pc2807h carrier frequency s1 s2 s3 32.7 khz gnd leave unconnected. leave unconnected. 36.0 khz gnd gnd gnd 36.7 khz leave unconnected. gnd gnd 37.9 khz leave unconnected. leave unconnected. leave unconnected. 56.7 khz leave unconnected. leave unconnected. gnd ? pc2807ha carrier frequency s1 s2 s3 40.0 khz leave unconnected. leave unconnected. leave unconnected.
data sheet s16455ej1v0ds 4 pc2807h, 2807ha electrical specifications absolute maximum ratings (t a = = = = + + + + 25 3 c) parameter symbol ratings unit supply voltage v cc 6.0 v output sink current i osink 2.5 ma input voltage v in 0 to v cc v storage temperature t stg ? 40 to + 125 c caution product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. that is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. recommended operating conditions (t a = = = = 25 3 c) parameter symbol conditions min. typ. max. unit supply voltage v cc 4.5 5.0 5.5 v operating ambient temperature t a ? 25 + 25 + 80 c
data sheet s16455ej1v0ds 5 pc2807h, 2807ha electrical characteristics (t a = + + + + 25 3 c, v cc = = = = 5 v) parameter symbol conditions min. typ. max. unit circuit current i cc with no signal applied. s1, s2, and s3: leave unconnected. 1.2 1.6 1.9 ma low-level output voltage 1 v ol1 without external pull-up resistor ? 0.05 0.4 v low-level output voltage 2 v ol2 with external 10-k ? pull-up resistor connected ? 0.10 0.5 v high-level output voltage v oh 4.8 5.0 ? v voltage gain a v s1, s2, and s3: leave unconnected. v in = 30 db v note1 , f = 37.9 khz note2 70 78 84 db bpf bandwidth f bw ? 3 db bandwidth. s1, s2, and s3: leave unconnected. v in = 30 db v note1 1.5 3.0 4.5 khz output pulse width 1 t bw1 s1, s2, and s3: leave unconnected. v in = 500 v p-p , f = 37.9 khz note2 , burst length: 600 s, cycle: 1.2 ms note3 average value of output from start of signal input to 60th pulse 400 600 800 s output pulse width 2 t pw2 s1, s2, and s3: leave unconnected. v in = 50 mv p-p , f = 37.9 khz note2 , burst length: 600 s, cycle: 1.2 ms note3 average value of output from start of signal input to 60th pulse 400 600 800 s output pulse rise time t r output: leave unconnected. use the fet probe note4 ?1.02.0 s output pulse fall time t f output: leave unconnected. use the fet probe note4 ?0.11.0 s notes 1. 30 db v = 31.6 v r.m.s. 2. f = 37.9 khz for the pc2807h. in the pc2807ha, measurement is at f = 40.0 khz. 3. input the following burst signal. 37.9-khz carrier 600 s 600 s 600 s 4. measurement points of rise and fall time are shown in below. t r t f 10% 90% 10% 90%
data sheet s16455ej1v0ds 6 pc2807h, 2807ha application circuit example (at carrier frequency of 37.9 khz) remark f = 37.9 khz for the pc2807h. in the pc2807ha, f = 40.0 khz. 6 13 12 11 10 trap skip first-stage amplifier 4 waveform-shaping circuit 2 limiter amplifier trimming circuit 1 f o setting 8 7 3 gnd1 gnd2 output pad6 pad3 pad4 pad5 9 5 out s3 s2 pad1 in s1 trap bpf 5 v v cc detector 22 k ? pin photo- diode + i/v ablc carrier elimination
data sheet s16455ej1v0ds 7 pc2807h, 2807ha notes for bicmos devices 1 precaution against esd for semiconductors note: strong electric field, when exposed to a device, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. environmental control must be adequate. when it is dry, humidifier should be used. it is recommended to avoid using insulators that easily build static electricity. semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. all test and measurement tools including work bench and floor should be grounded. the operator should be grounded using wrist strap. semiconductor devices must not be touched with bare hands. similar precautions need to be taken for pw boards with semiconductor devices on it. 2 handling of unused input pins note: no connection for device inputs can be cause of malfunction. if no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. input levels of devices must be fixed high or low by using a pull-up or pull- down circuitry. each unused pin should be connected to v dd or gnd with a resistor, if it is considered to have a possibility of being an output pin. all handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 status before initialization of bicmos devices note: power-on does not necessarily define initial status of device. production process of bicmos does not define the initial operation status of the device. immediately after the power source is turned on, the devices with reset function have not yet been initialized. hence, power-on does not guarantee out-pin levels, i/o settings or contents of registers. device is not initialized until the reset signal is received. reset operation must be executed immediately after power-on for devices having reset function.
pc2807h, 2807ha m8e 00. 4 the information in this document is current as of october, 2002. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": com puters, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
|
